职称：副教授/硕士生导师
个人简介：
戴扬 工学博士，副教授，硕士生导师，现任职于西北大学信息科学与技术学院。
欢迎各类专业考生报考。 E-mail: daiyang@nwu.edu.cn
科研情况：
研究方向为宽禁带半导体电子器件与电路、毫米波与太赫兹波技术、无源感知技术等。主持国家自然科学基金青年项目、陕西省教育厅专项项目、教育部教改项目，参与各类项目多项。发表相关论文三十余篇，授权发明专利五项，成果转化一项。
主持及参与的科研项目：
1. 国家自然科学基金青年基金，61804125，GaN基雪崩渡越时间器件击穿及交流特性研究，主持。
2. 陕西省教育厅专项项目，18JK0772，新型GaN基雪崩渡越时间器件研究，主持。
3. 国家自然科学基金重点项目，61434006，太赫兹HEMT器件基础研究，参与。
4. 国家自然科学基金面上项目，61274092，氮化镓基太赫兹电子器件关键技术的研究，参与。
近年发表论文：
1. Dai Y, Dang JT, Lei XY, Zhang YY, Yan JF, Zhao W, Chen XJ, Zhao SL. “Study on Schottky AlxGa1-xN/GaN IMPATT Diodes for Millimeter-Wave Application”. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69(9): 4853-4858.
2. Dai Y, Lu ZY, Ye QS, Dang JT, Zhao SL, Lei XY, Yun JN, Zhao W, Chen XJ. “Study of InxGa1-xN/GaN Homotype Heterojunction IMPATT Diodes”. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68(11): 5469-5475.
3. Zhao YB , Wang XW, Bai HT, Zhang YM, Gao J, Zhai CX, Dai Y. “ First-principles calculation of the electronic structure and optical properties of graphene-like InxAl1-xN monolayers“. Materials Science, 2022，vol.28, No.4.
4. Han H B, Hao L, Wang L and Dai Y. “A new square-slot circularly polarized antenna array with broadband characteristic”. Electromagnetics, 2021, 41(7): 493-503.
5. Dai Y, Dang JT, Ye QS, Lu ZY, Pu S, Lei XY, Zhao SL, Zhang YY, Liao CG, Zhang H. “Study on Electric Field Modulation and Avalanche Enhancement of SiC/GaN IMPATT Diode”. ELECTRONICS, 2021, 10(17).
6. Dai Y, Ye QS, Dang JT, Lu ZY, Zhang WW, Lei XY, Zhang YY, Zhang H, Liao CG, Li Y, Zhao W. “Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode”. MICROMACHINES, 2021, 12(8).
7. Liao CG, Zhang H, Zhang YY, Lei XY, Dai Y, Ma XL, Zhao W, Zhang ZY. “Electrothermal characterization on the interface of self-assembled Van der Waals through vias”. APPLIED NANOSCIENCE, 2021, 11(5): 1501-1509.
8. Zhao SL, Wang ZZ, Chen DZ, Wang MJ, Dai Y, Ma XH, Zhang JC, Hao Y. “1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor”. CHINESE PHYSICS B,2019,28(2).
9. Lei X, Dai Y, Liu Z, et al. “Low power Resistive Switching Phenomena in Ti/SiN/Au Memory Device”. IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2019: 1-3.
10. Zhang Y, Lin Z, Dai Y, et al. “Vertical GaN MOSFETs with Over 1.6 kV breakdown voltage: A theoretical studying”. Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). IEEE, 2018: 199-202.
11. Dai Y, Yang L A, Xu S R and Hao Y. “Anisotropy effects on the performance of wurtzite GaN impact-ionization-avalanche-transit-time diodes”. Applied Physics Express, 2016, 9(11) : 111004.1-111004.1.
12. Dai Y, Yang L A, Chen Q, Wang Y and Hao Y. “Enhancement of the performance of GaN IMPATT diodes by negative differential mobility”. AIP Advances, 2016, 6(5) : 055301.
